SFH610A / SFH6106
Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS
Features 
• Good CTR Linearity Depending on Forward Current
• Isolation Test Voltage, 5300 VRMS
• High Collector-Emitter Voltage, VCEO = 70 V
• Low Saturation Voltage
• Fast Switching Times
• Low CTR Degradation
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, 0.100" (2.54 mm) Spacing
• High Common-Mode Interference Immunity
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J, Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
• BSI IEC60950 IEC60065
Description
The SFH610A (DIP) and SFH6106 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
| Parameter | Test condition | Symbol | Value | Unit |
| Reverse voltage | | VR | 6.0 | V |
| DC Forward current | | IF | 60 | mA |
| Surge forward current | t ≤ 10 µs | IFSM | 2.5 | A |
| Power dissipation | | Pdiss | 100 | mW |
Output
| Parameter | Test condition | Symbol | Value | Unit |
| Collector-emitter voltage | | VCE | 70 | V |
| Emitter-collector voltage | | VEC | 7.0 | V |
| Collector current | | IC | 50 | mA |
| t ≤ 1.0 ms | IC | 100 | mA |
| Power dissipation | | Pdiss | 150 | mW |
Coupler
| Parameter | Test condition | Symbol | Value | Unit |
| Isolation test voltage between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74 | | VISO | 5300 | VRMS |
| Creepage | | | ≥ 7.0 | mm |
| Clearance | | | ≥ 7.0 | mm |
| Insulation thickness between emitter and detector | | | ≥ 0.4 | mm |
| Comparative Tracking index per DIN IEC 112/VDEO 303, part 1 | | | ≥ 175 | |
| Isolation resistance | VIO = 500 V, Tamb = 25 °C | RIO | ≥ 1012 | Ω |
| VIO = 500 V, Tamb = 100 °C | RIO | ≥ 1011 | Ω |
| Storage temperature range | | Tstg | - 55 to + 150 | °C |
| Ambient temperature range | | Tamb | - 55 to + 100 | °C |
| Junction temperature | | Tj | 100 | °C |
| Soldering temperature | max. 10 s. dip soldering distance to seating plane ≥ 1.5 mm | Tsld | 260 | °C |
Package Dimensions in Inches (mm)
Product Tags:
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SFH6106-3 Integrated Circuit Chip Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS Images
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