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SPW35N60CFD Power Mosfet Transistor , CoolMOSTM Power Transistor

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Anterwell Technology Ltd.

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SPW35N60CFD Power Mosfet Transistor , CoolMOSTM Power Transistor

Name: SPW35N60CFD Power Mosfet Transistor CoolMOSTM Power Transistor
Brand: Anterwell
Price: 1 USD

Brand Name : Anterwell

Model Number : SPW35N60CFD

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8600pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Pulsed drain current : 85 A

Avalanche current, repetitive t AR : 20 A

Drain source voltage slope : 80 V/ns

Reverse diode dv /dt : 40 V/ns

Power dissipation : 313 W

Operating and storage temperature : -55 to 150 °C

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CoolMOSTM Power Transistor

Features PG-TO247
• New revolutionary high voltage technology SPW35N60CFD Power Mosfet Transistor , CoolMOSTM Power Transistor
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant

Product Summary

V_DS	600	V
R_DS(on),max	0.118	Ω
I_D	34	A

Maximum ratings, at T j =25 °C, unless otherwise specified

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I _D	T _C=25 °C	34.1	A
Continuous drain current	I _D	T _C=100 °C	21.6	A
Pulsed drain current²⁾	I _D,pulse	T C=25 °C	85	A
Avalanche energy, single pulse	E _AS	I _D=10 A, V _DD=50 V	1300	mJ
Avalanche energy, repetitive t _AR ^2),3)	E _AR	I _D=20 A, V _DD=50 V	1	mJ
Avalanche current, repetitive t _AR ^2),3)	I _AR		20	A
Drain source voltage slope	dv /dt	_{I D}=34.1 A, V _DS=480 V, T j =125 °C	80	V/ns
Reverse diode dv /dt	dv /dt	I _S=34.1 A, V _DS=480 V, T j =125 °C	40	V/ns
Maximum diode commutation speed	di /dt	I _S=34.1 A, V _DS=480 V, T j =125 °C	600	A/µs
Gate source voltage	V GS	static	±20	V
Gate source voltage	V GS	AC (f >1 Hz)	±30	V
Power dissipation	P tot	T C=25 °C	313	W
Operating and storage temperature	T j , T stg		-55 ... 150	°C

PG-TO247-3-21-41
SPW35N60CFD Power Mosfet Transistor , CoolMOSTM Power Transistor

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Package

L6258EX	7125	ST	13+	HSSOP36
ACM2520-102-2P-T002	7120	TDK	15+	inductor
ASSR-1218-503E	7116	AVAGO	15+	SOP-4
PIC16F886-I/SS	7102	MICROCHIP	15+	SSOP
L05172	7100	ST	14+	HSSOP36
MAX4073HAXK	7097	MAXIM	14+	SOT
ZTX603	7089	ZETEX	15+	TO-92
ACM2012-900-2P-T00	7088	TDK	15+	inductor
XTR117AIDGKR	7084	TI	15+	MSOP-8
ATF21186	7083	Agilent	12+	SMT86
L9929	7075	ST	15+	HSSOP24
MAX3483ECSA	7058	MAXIM	13+	SOP
ACM2012-361-2P-T00	7056	TDK	15+	inductor
L9958SB	7050	ST	13+	HSSOP16
ATMEGA16L-8AU	7050	ATMEL	15+	QFP44
MAX793TCSE	7047	MAXIM	15+	SOP
MAX8606ETD+T	7042	MAXIM	10+	QFN
AD8613AKSZ	7040	AD	15+	SC70-5
MAX4544EUT+T	7035	MAXIM	14+	SOT
L9110PD	7025	ST	14+	HSSOP
PIC12F683-I/SN	7024	MICROCHIP	15+	SOP

Product Tags:

multi emitter transistor

silicon power transistors

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