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New & Original Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3683

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New & Original Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3683

Brand Name : Anterwell

Model Number : 2SK3683

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 10000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Drain-Source Voltage : 500 V

Continuous Drain Current : ±19 A

Pulsed Drain Current : ±76 A

Gate-Source Voltage : ±30 V

Repetitive and Non-Repetitive Maximum Avalanche Current : 19 A

Maximum Drain-Source dV/dt : 20 kV/us

Operating Temperature : 150℃

Storage ℃ Temperature range : -55 ~ +150℃

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Fuji Power MOSFET SuperFAP-G series Target Specification

2SK3683-01MR (500V/0.38Ω/19A)

1) Package TO-220F15R

2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)

Characteristics Symbol Rating Unit
Drain−source voltage VDS 500 V
Continuous Drain Current ID ±19 A
Pulsed Drain Current ID(pulse) ±76 A
Gate-Source Voltage VGS ±30 V
Repetitive and Non-Repetitive Maximum Avalanche Current IAR 19 A
Non-Repetitive Maximum Avalanche Energy EAS 245.3 mJ *1
Maximum Drain-Source dV/dt dVDS/dt 20 kV/us
Peak Diode recovery dV/dt dV/dt 5 kV/us *2
Maximum Power Dissipation PD @Tc=25℃ 95 W
PD @Ta=25℃ 2.16 W
Operating and Storage Temperature range Tch 150
Tstg -55 ~ +150

Thermal Characteristics

Items Symbols Test Conditions min. typ. max. Units
Channel to Case Rth(ch-c) 1.316 ℃/W
Channel to Ambient Rth(ch-a) 58.0 ℃/W

*1 L=1.25mH,Vcc=50V

*2 IF≤-ID,-di/dt=50A/µs,Vcc≤BVDSS,Tch≤150°C


Product Tags:

multi emitter transistor

      

silicon power transistors

      
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